GES4888 Specs and Replacement
Type Designator: GES4888
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 160 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO236
GES4888 Substitution
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GES4888 datasheet
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Detailed specifications: GES4354, GES4355, GES4356, GES4400, GES4401, GES4402, GES4403, GES4450, A733, GES4889, GES4890, GES4916, GES4917, GES4926, GES4927, GES4928, GES4929
Keywords - GES4888 pdf specs
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History: DTC114EY3 | DTA123TET1G | 2SC512O | DTC114EUAFRA
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