GES4929 Specs and Replacement
Type Designator: GES4929
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO92
GES4929 Substitution
- BJT ⓘ Cross-Reference Search
GES4929 datasheet
NO PDF data!
Detailed specifications: GES4888, GES4889, GES4890, GES4916, GES4917, GES4926, GES4927, GES4928, 2SA1837, GES4930, GES4931, GES4964, GES4965, GES5087, GES5088, GES5089, GES5127
Keywords - GES4929 pdf specs
GES4929 cross reference
GES4929 equivalent finder
GES4929 pdf lookup
GES4929 substitution
GES4929 replacement
History: LDTA124TET1G | RCP113D | RCP113A
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P
Popular searches
кт630 | 2g381 transistor | 2sc2383 transistor equivalent | 2sd669 transistor | 75n65kdf | c2274 transistor | c5200 2sc5200 transistor datasheet | d2390 datasheet
