GES5131 Specs and Replacement

Type Designator: GES5131

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO236

 GES5131 Substitution

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GES5131 datasheet

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Detailed specifications: GES4965, GES5087, GES5088, GES5089, GES5127, GES5128, GES5129, GES5130, 8550, GES5132, GES5133, GES5135, GES5136, GES5137, GES5138, GES5139, GES5140

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