GES5133 Specs and Replacement

Type Designator: GES5133

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO236

 GES5133 Substitution

- BJT ⓘ Cross-Reference Search

 

GES5133 datasheet

NO PDF data!

Detailed specifications: GES5088, GES5089, GES5127, GES5128, GES5129, GES5130, GES5131, GES5132, TIP42, GES5135, GES5136, GES5137, GES5138, GES5139, GES5140, GES5141, GES5142

Keywords - GES5133 pdf specs

 GES5133 cross reference

 GES5133 equivalent finder

 GES5133 pdf lookup

 GES5133 substitution

 GES5133 replacement