GES5142 Specs and Replacement
Type Designator: GES5142
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO236
GES5142 Substitution
- BJT ⓘ Cross-Reference Search
GES5142 datasheet
NO PDF data!
Detailed specifications: GES5133, GES5135, GES5136, GES5137, GES5138, GES5139, GES5140, GES5141, 13005, GES5143, GES5172, GES5179, GES5305, GES5306, GES5306A, GES5307, GES5308
Keywords - GES5142 pdf specs
GES5142 cross reference
GES5142 equivalent finder
GES5142 pdf lookup
GES5142 substitution
GES5142 replacement
History: DMA26603
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P
Popular searches
mj15025g | ksa1381 replacement | m3056m mosfet | skd502t mosfet | tip 35 transistor | bu2508df | 2n2222a transistor equivalent | 2sc2509
