GES5373 Specs and Replacement
Type Designator: GES5373
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO92
GES5373 Substitution
- BJT ⓘ Cross-Reference Search
GES5373 datasheet
NO PDF data!
Detailed specifications: GES5307, GES5308, GES5308A, GES5368, GES5369, GES5370, GES5371, GES5372, 2SC2383, GES5374, GES5375, GES5400, GES5400R, GES5401, GES5401R, GES5447, GES5448
Keywords - GES5373 pdf specs
GES5373 cross reference
GES5373 equivalent finder
GES5373 pdf lookup
GES5373 substitution
GES5373 replacement
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P
Popular searches
c2389 | c495 transistor | c5242 reemplazo | d667 transistor datasheet | hy1d datasheet | mp20a transistor | mrf450 | oc70 transistor
