GES5447 Specs and Replacement

Type Designator: GES5447

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.36 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 12 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO236

 GES5447 Substitution

- BJT ⓘ Cross-Reference Search

 

GES5447 datasheet

NO PDF data!

Detailed specifications: GES5372, GES5373, GES5374, GES5375, GES5400, GES5400R, GES5401, GES5401R, S9018, GES5448, GES5449, GES5450, GES5451, GES5550, GES5550R, GES5551, GES5551R

Keywords - GES5447 pdf specs

 GES5447 cross reference

 GES5447 equivalent finder

 GES5447 pdf lookup

 GES5447 substitution

 GES5447 replacement