GES5449 Specs and Replacement
Type Designator: GES5449
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO236
GES5449 Substitution
- BJT ⓘ Cross-Reference Search
GES5449 datasheet
NO PDF data!
Detailed specifications: GES5374, GES5375, GES5400, GES5400R, GES5401, GES5401R, GES5447, GES5448, MJE350, GES5450, GES5451, GES5550, GES5550R, GES5551, GES5551R, GES5810, GES5811
Keywords - GES5449 pdf specs
GES5449 cross reference
GES5449 equivalent finder
GES5449 pdf lookup
GES5449 substitution
GES5449 replacement
History: BCW80 | BFT72
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P
Popular searches
p157r5nt | ptp03n04n | sm4377 mosfet datasheet | tip31c reemplazo | 2sa906 | c2389 transistor | c2634 transistor | mdp1991 datasheet
