GES5551 Specs and Replacement

Type Designator: GES5551

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SOT23

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GES5551 datasheet

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Detailed specifications: GES5401R, GES5447, GES5448, GES5449, GES5450, GES5451, GES5550, GES5550R, A42, GES5551R, GES5810, GES5811, GES5812, GES5813, GES5814, GES5815, GES5816

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