GES5825 Specs and Replacement

Type Designator: GES5825

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.36 W

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO92

 GES5825 Substitution

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GES5825 datasheet

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Detailed specifications: GES5816, GES5817, GES5818, GES5819, GES5820, GES5822, GES5823, GES5824, BC548, GES5826, GES5827, GES5827A, GES5828, GES5828A, GES5855, GES5856, GES5857

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