GI2925 Datasheet and Replacement

   Type Designator: GI2925
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Max. Operating Junction Temperature (Tj): 125 °C
   Collector Capacitance (Cc): 12 pF
   Forward Current Transfer Ratio (hFE), MIN: 470
   Noise Figure, dB: -
   Package: TO18
      - BJT Cross-Reference Search