GME1001 Datasheet and Replacement

   Type Designator: GME1001
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 300 MHz
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO106
     - BJT ⓘ Cross-Reference Search