GME4001 Specs and Replacement

Type Designator: GME4001

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO106

 GME4001 Substitution

- BJT ⓘ Cross-Reference Search

 

GME4001 datasheet

NO PDF data!

Detailed specifications: GME0404-1, GME0404-2, GME1001, GME1002, GME2001, GME2002, GME3001, GME3002, 2SC2240, GME4002, GME4003, GME6001, GME6002, GME6003, GME9001, GME9002, GME9021

Keywords - GME4001 pdf specs

 GME4001 cross reference

 GME4001 equivalent finder

 GME4001 pdf lookup

 GME4001 substitution

 GME4001 replacement