GME6001 Datasheet and Replacement
Type Designator: GME6001
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO106
GME6001 Substitution
GME6001 Datasheet (PDF)
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Datasheet: GME1002 , GME2001 , GME2002 , GME3001 , GME3002 , GME4001 , GME4002 , GME4003 , 2SA1015 , GME6002 , GME6003 , GME9001 , GME9002 , GME9021 , GME9022 , GMJ2955 , GMJ3055 .
History: MG200H1AL1 | BC817-16-G | 2SC2552 | MMT3014 | NPS4125 | DMC364A6
Keywords - GME6001 transistor datasheet
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History: MG200H1AL1 | BC817-16-G | 2SC2552 | MMT3014 | NPS4125 | DMC364A6



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