GS112E Datasheet, Equivalent, Cross Reference Search
Type Designator: GS112E
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.083 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector Current |Ic max|: 0.21 A
Max. Operating Junction Temperature (Tj): 90 °C
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO39
Datasheet: GS110 , GS111B , GS111C , GS111D , GS111E , GS112B , GS112C , GS112D , 13007 , GS121B , GS121C , GS121D , GS122 , GS2012 , GS2013 , GS2014 , GS2017 .
History: 2N5846