GS112E Datasheet and Replacement

   Type Designator: GS112E
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.083 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector Current |Ic max|: 0.21 A
   Max. Operating Junction Temperature (Tj): 90 °C
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO39
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