GSDS50020 Specs and Replacement

Type Designator: GSDS50020

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Collector Current |Ic max|: 50 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: TO3

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GSDS50020 datasheet

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Detailed specifications: GSDR10020I, GSDR10025, GSDR10025I, GSDR15020, GSDR15020I, GSDR15025, GSDR15025I, GSDS50018, 2SC2383, GSDU7530, GSDU7535, GSDU7540, GSH9012, GSH9012D, GSH9012E, GSH9012F, GSH9032

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