GSRU10040 Specs and Replacement
Type Designator: GSRU10040
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
GSRU10040 Substitution
- BJT ⓘ Cross-Reference Search
GSRU10040 datasheet
isc Silicon NPN Power Transistor GSRU15040 DESCRIPTION High DC Current Gain- h = 10(MIN)@I = 15A FE C Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power Supplies Switching Amplifiers Inverters/Converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas... See More ⇒
Detailed specifications: GSH9032 , GSH9032D , GSH9032E , GSH9033 , GSH9033D , GSH9033E , GSRU10030 , GSRU10035 , BD333 , GSRU15030 , GSRU15030A , GSRU15035 , GSRU15035A , GSRU15040 , GSRU15040A , GSRU20030 , GSRU20035 .
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