GSRU15035 Specs and Replacement
Type Designator: GSRU15035
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 450 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
GSRU15035 Substitution
- BJT ⓘ Cross-Reference Search
GSRU15035 datasheet
isc Silicon NPN Power Transistor GSRU15040 DESCRIPTION High DC Current Gain- h = 10(MIN)@I = 15A FE C Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power Supplies Switching Amplifiers Inverters/Converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas... See More ⇒
Detailed specifications: GSH9033, GSH9033D, GSH9033E, GSRU10030, GSRU10035, GSRU10040, GSRU15030, GSRU15030A, BC547, GSRU15035A, GSRU15040, GSRU15040A, GSRU20030, GSRU20035, GSRU20040, GSTR8030, GSTU10030
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