GSTR8030 Datasheet and Replacement

   Type Designator: GSTR8030
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 188 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 350 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 25 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3
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