2N3784 Specs and Replacement
Type Designator: 2N3784
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 700 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO72
2N3784 Substitution
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2N3784 datasheet
2n3789 2n3790 2n3791 2n3792.pdf ![]()
DATA SHEET 2N3789 2N3790 2N3791 2N3792 PNP POWER TRANSISTORS JEDEC TO-3 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3789 Series types are silicon power transistors manufactured by the epitaxial planar process and designed for medium speed switching and amplifier applications. MAXIMUM RATINGS (TC=25 C unless otherwise noted) 2N3789 2N3790 SYMBOL 2N3791 2N3792 UNITS Col... See More ⇒
2n3713-2n3714-2n3715-2n3716-2n3789-2n3790-2n3791-2n3792.pdf ![]()
2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP types are 2N3789, 2N3790, 2N3791 and 2N3792 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Rat... See More ⇒
2N3789XSMD Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar PNP Device. 2 VCEO = 60V IC = 10A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 ... See More ⇒
Detailed specifications: 2N3778 , 2N3779 , 2N377A , 2N378 , 2N3780 , 2N3781 , 2N3782 , 2N3783 , TIP32C , 2N3785 , 2N3788 , 2N3789 , 2N3789SM , 2N379 , 2N3790 , 2N3790SM , 2N3790X .
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