GT109E Specs and Replacement
Type Designator: GT109E
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.03 W
Maximum Collector-Base Voltage |Vcb|: 10 V
Maximum Collector-Emitter Voltage |Vce|: 6 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 80 °C
Electrical Characteristics
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
GT109E Substitution
- BJT ⓘ Cross-Reference Search
GT109E datasheet
Detailed specifications: GT1079, GT108A, GT108B, GT108G, GT108V, GT109A, GT109B, GT109D, B772, GT109G, GT109I, GT109J, GT109V, GT115A, GT115B, GT115D, GT115G
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