GT115G Datasheet and Replacement

   Type Designator: GT115G
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 20 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 80 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
     - BJT ⓘ Cross-Reference Search