All Transistors. GT125B Datasheet

 

GT125B Datasheet and Replacement


   Type Designator: GT125B
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 20 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 90 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 45
   Noise Figure, dB: -
 

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GT125B Datasheet (PDF)

 9.1. Size:414K  russia
 gt125a-b-v-g-d-e-zh-i-k-l.pdf pdf_icon

GT125B

 9.2. Size:3940K  goford
 gt125n10t gt125n10m gt125n10f.pdf pdf_icon

GT125B

GT125N10GOFORD General Description GT125N10 use advanced SFGMOSTM RDS(ON)technology to provide low R , low gate DS(ON) VDSS ID @10V (Typ.)charge, fast switching and excellent avalanche characteristics. This device is specially designed 100V 130A4.1mto get better ruggedness and suitable to use in motor control applications. Applications Features Consu

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: BC291A | BD136-25 | PZT3019 | GT250-10B | BC210 | PUMB16 | GT109J

Keywords - GT125B transistor datasheet

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