GT250-10B Specs and Replacement
Type Designator: GT250-10B
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1330 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 250 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 50
Package: XM37
GT250-10B Substitution
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GT250-10B datasheet
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Detailed specifications: GT1605, GT1606, GT1607, GT1608, GT1609, GT1644, GT200, GT250-10A, MJE350, GT250-10C, GT250-10D, GT250-3A, GT250-3B, GT250-3C, GT250-3D, GT250-4A, GT250-4B
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