GT250-4B Specs and Replacement

Type Designator: GT250-4B

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1330 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 250 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: XM37

 GT250-4B Substitution

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GT250-4B datasheet

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Detailed specifications: GT250-10B, GT250-10C, GT250-10D, GT250-3A, GT250-3B, GT250-3C, GT250-3D, GT250-4A, BDT88, GT250-4C, GT250-4D, GT250-5A, GT250-5B, GT250-5C, GT250-5D, GT250-6A, GT250-6B

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