GT250-8C Specs and Replacement
Type Designator: GT250-8C
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 900 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 160 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 50
Package: XM37
GT250-8C Substitution
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GT250-8C datasheet
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Detailed specifications: GT250-6C, GT250-6D, GT250-7A, GT250-7B, GT250-7C, GT250-7D, GT250-8A, GT250-8B, S8050, GT250-8D, GT250-9A, GT250-9B, GT250-9C, GT250-9D, GT2693, GT2694, GT2695
Keywords - GT250-8C pdf specs
GT250-8C cross reference
GT250-8C equivalent finder
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History: BLY53AP | BLV91
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