GT250-9C Specs and Replacement
Type Designator: GT250-9C
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 900 W
Maximum Collector-Base Voltage |Vcb|: 900 V
Maximum Collector-Emitter Voltage |Vce|: 900 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 160 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 50
Package: XM37
GT250-9C Substitution
- BJT ⓘ Cross-Reference Search
GT250-9C datasheet
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Detailed specifications: GT250-7C, GT250-7D, GT250-8A, GT250-8B, GT250-8C, GT250-8D, GT250-9A, GT250-9B, 13007, GT250-9D, GT2693, GT2694, GT2695, GT2696, GT2765, GT2766, GT2767
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