GT308V Specs and Replacement
Type Designator: GT308V
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 9 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 85 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
GT308V Substitution
- BJT ⓘ Cross-Reference Search
GT308V datasheet
Detailed specifications: GT2888, GT2906, GT305A, GT305B, GT305V, GT308A, GT308B, GT308G, A940, GT309A, GT309B, GT309D, GT309E, GT309G, GT309V, GT310A, GT310B
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