GT321B Specs and Replacement

Type Designator: GT321B

Material of Transistor: Ge

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.16 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 85 °C

Electrical Characteristics

Transition Frequency (ft): 60 MHz

Collector Capacitance (Cc): 80 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

 GT321B Substitution

- BJT ⓘ Cross-Reference Search

 

GT321B datasheet

Detailed specifications: GT311V, GT313A, GT313B, GT313V, GT320A, GT320B, GT320V, GT321A, NJW0281G, GT321D, GT321E, GT321G, GT321V, GT322A, GT322B, GT322D, GT322E

Keywords - GT321B pdf specs

 GT321B cross reference

 GT321B equivalent finder

 GT321B pdf lookup

 GT321B substitution

 GT321B replacement