GT321E Datasheet, Equivalent, Cross Reference Search

   Type Designator: GT321E
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.16 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 2 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 85 °C
   Transition Frequency (ft): 60 MHz
   Collector Capacitance (Cc): 80 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -

GT321E Transistor Equivalent Substitute - Cross-Reference Search