HEPS0029 Datasheet and Replacement

   Type Designator: HEPS0029
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.31 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 135 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO92
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