HEPS3003 Datasheet and Replacement

   Type Designator: HEPS3003
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 6 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO39
     - BJT ⓘ Cross-Reference Search