HEPS3035 Datasheet, Equivalent, Cross Reference Search

   Type Designator: HEPS3035
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 270 V
   Maximum Collector-Emitter Voltage |Vce|: 270 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: TO39

HEPS3035 Transistor Equivalent Substitute - Cross-Reference Search