HSE317 Datasheet and Replacement

   Type Designator: HSE317
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.31 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
   Package: TO106
      - BJT Cross-Reference Search