HT100 Datasheet and Replacement
Type Designator: HT100
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 11
Noise Figure, dB: -
Package: TO18
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HT100 Datasheet (PDF)
cht100gp.pdf

CHENMKO ENTERPRISE CO.,LTDCHT100GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 1.1 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SOT-23FEATURE* Small surface mounting type. (SOT-23)* High density cell design for low RDS(ON). * Suitable for high packing density.* Rugged a
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: NJD2873T4G | FZT560 | AFY29 | ET5065 | CH867UPNGP | DTC014YM | 2SD1667R
Keywords - HT100 transistor datasheet
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History: NJD2873T4G | FZT560 | AFY29 | ET5065 | CH867UPNGP | DTC014YM | 2SD1667R



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