HVT1000 PDF and Equivalents Search

HVT1000 Specs and Replacement

Type Designator: HVT1000

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 1000 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 6 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO46

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HVT1000 datasheet

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Detailed specifications: HSE911, HSE912, HT100, HT101, HT2, HT3, HT400, HT401, TIP32C, HVT200, HVT400, HVT600, HVT800, HVT900, HX50113, IDA1012, IDA1146

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