IMH5A Datasheet, Equivalent, Cross Reference Search
Type Designator: IMH5A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SO6
IMH5A Transistor Equivalent Substitute - Cross-Reference Search
IMH5A Datasheet (PDF)
umh5n imh5a h5 sot363 sot23-6.pdf
UMG1N / UMH1N / UMH5N / FMG1A / IMH1A / IMH5ATransistorsGeneral purpose (dual digital transistors)UMG1N / UMH1N / UMH5N / FMG1A / IMH1A / IMH5A External dimensions (Units : mm) Features1) Two DTA124E chips in a UMT or SMT package.UMG1N1.25 Absolute maximum ratings (Ta = 25C)2.1Parameter Symbol Limits UnitSupply voltage VCC 50 V0.1Min.40ROHM : UMT5Input voltage
umh5n umh5n imh5a.pdf
UMH5N / IMH5A Transistors General purpose (dual digital transistors) UMH5N / IMH5A Dimensions (Unit : mm) Features 1) Two DTC124E chips in a EMT or UMT or SMT package. UMH5N Circuit schematic (6) (5) (4)UMH5N IMH5A(3) (2) (1) (4) (5) (6)R1 R1R2 R2 R2 R2(1) (2) (3)R1 R1(4) (5) (6) (3) (2) (1)ROHM : UMT6 Each lead has same dimensionsR1=R2=22k R1=R2=22k
umh5nfha imh5afra.pdf
UMH5NFHA / IMH5AFRAUMH5N / IMH5ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineUMT6 SMT6Parameter Tr1 and Tr2(6) (4) (5) (5) VCC50V (4) (6) (1) (3) IC(MAX.) (2) 100mA (2) (3) (1) R122kWUMH9N IMH9A UMH5NFHA IMH5AFRAR222kW SOT-353 (SC-88) SOT-457 (SC-74) lFeatures lInne
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
