IR4046 Datasheet, Equivalent, Cross Reference Search
Type Designator: IR4046
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 400
Noise Figure, dB: -
Package: TO3
IR4046 Transistor Equivalent Substitute - Cross-Reference Search
IR4046 Datasheet (PDF)
sir404dp.pdf
New ProductSiR404DPVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.00160 at VGS = 10 V 60 TrenchFET Gen III Power MOSFET0.00175 at VGS = 4.5 V 20 60 64.5 nC 100 % Rg Tested0.00225 at VGS = 2.5 V 60 100 % UIS Tested 2.5 V and 3.
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .