J466 Specs and Replacement
Type Designator: J466
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO22
J466 Substitution
- BJT ⓘ Cross-Reference Search
J466 datasheet
Ordering number ENN5491B P-Channel Silicon MOSFET 2SJ466 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2128 4V drive. [2SJ466] Enables simplified fabrication, high-density mount- 8.2 7.8 ing, and miniaturization in end products due to the 6.2 0.6 3 surface mountable package. 1 2 0.3 1... See More ⇒
Detailed specifications: IT918, J24562, J460, J461, J462, J463, J464, J465, BC548, J581, J582, J583, J584, J585, J586, J587, J588
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