J589 Specs and Replacement
Type Designator: J589
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.675 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 95
Package: TO22
J589 Substitution
- BJT ⓘ Cross-Reference Search
J589 datasheet
Ordering number ENN7148 2SJ589LS P-Channel Silicon MOSFET 2SJ589LS DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm 4V drive. 2078C [2SJ589LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 Gate 2 Drain 3 Source Specifications 2.55 2.55 Absolute Maximum Ratings at Ta=25 C SANYO TO-220FI(LS) Parameter Symbol Conditio... See More ⇒
Detailed specifications: J581, J582, J583, J584, J585, J586, J587, J588, BD140, J594, J596, J623, J624, J625, J626, J627, J628
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