J625 Specs and Replacement
Type Designator: J625
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 18
Package: TO5
J625 Substitution
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J625 datasheet
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
Detailed specifications: J586, J587, J588, J589, J594, J596, J623, J624, 13009, J626, J627, J628, J629, J630, J631, JA100, JA100O
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History: TEC9015G | CMBT9014 | KT316AM | TEC9016G | J623 | BLW29 | MBT3906DW1T2G
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