JA101 Datasheet and Replacement
Type Designator: JA101
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 130 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package: TO92
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JA101 Datasheet (PDF)
ja101 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186JA101PNP general purpose transistor1998 Aug 04Product specificationSupersedes data of 1997 Mar 10File under Discrete Semiconductors, SC10Philips Semiconductors Product specificationPNP general purpose transistor JA101FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SB1269Q | FE4021 | WTMA44 | 2SC83 | BSS76S | 2STD1360 | 2SB867
Keywords - JA101 transistor datasheet
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History: 2SB1269Q | FE4021 | WTMA44 | 2SC83 | BSS76S | 2STD1360 | 2SB867



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