JA101O Specs and Replacement
Type Designator: JA101O
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 130 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Package: TO92
JA101O Substitution
- BJT ⓘ Cross-Reference Search
JA101O datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 JA101 PNP general purpose transistor 1998 Aug 04 Product specification Supersedes data of 1997 Mar 10 File under Discrete Semiconductors, SC10 Philips Semiconductors Product specification PNP general purpose transistor JA101 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 45 V). 1 base... See More ⇒
Detailed specifications: J630, J631, JA100, JA100O, JA100P, JA100Q, JA100R, JA101, 2SC4793, JA101P, JA101Q, JA101R, JA1100, JC327, JC327-16, JC327-25, JC327-40
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