All Transistors. JA101O Datasheet

 

JA101O Datasheet, Equivalent, Cross Reference Search


   Type Designator: JA101O
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 130 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: TO92

 JA101O Transistor Equivalent Substitute - Cross-Reference Search

   

JA101O Datasheet (PDF)

 9.1. Size:49K  philips
 ja101 3.pdf

JA101O JA101O

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186JA101PNP general purpose transistor1998 Aug 04Product specificationSupersedes data of 1997 Mar 10File under Discrete Semiconductors, SC10Philips Semiconductors Product specificationPNP general purpose transistor JA101FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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