JC558B Specs and Replacement
Type Designator: JC558B
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 220
Package: TO92
JC558B Substitution
- BJT ⓘ Cross-Reference Search
JC558B datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 JC556; JC557; JC558 PNP general purpose transistors 1999 Apr 27 Product specification Supersedes data of 1997 Jul 02 Philips Semiconductors Product specification PNP general purpose transistors JC556; JC557; JC558 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 65 V). 1 base 2 collecto... See More ⇒
Detailed specifications: JC556, JC556A, JC556B, JC557, JC557A, JC557B, JC557C, JC558, TIP32C, JC558C, JC559, JC559A, JC559C, JC560A, JC560B, JC560C, JE5400
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