K2102 Datasheet, Equivalent, Cross Reference Search
Type Designator: K2102
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 1000 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO50
K2102 Transistor Equivalent Substitute - Cross-Reference Search
K2102 Datasheet (PDF)
0.1. Size:144K first silicon
ftk2102.pdf
ftk2102.pdf
SEMICONDUCTORFTK2102TECHNICAL DATA20V N-Channel Enhancement-Mode MOSFET FEATURE 3Leading Trench Technology for Low RDS(on) Extending Battery Life 21SOT323APPLICATIONS High Side Load Switch Charging Circuit 3 Single Cell Battery Applications such as Cell Phones, Digital Cameras ,PDAs, etc 1 2 MARKING: TS2 Maximum ratings (Ta=25 unless otherwise noted)
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: JE9016I
