K2110B Datasheet, Equivalent, Cross Reference Search
Type Designator: K2110B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 1700 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO72
K2110B Transistor Equivalent Substitute - Cross-Reference Search
K2110B Datasheet (PDF)
2sk2110.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2110N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK2110 is a N-channel MOSFET of a vertical type 4.5 0.1and is a switching element that can be directly driven by the output of an IC operating at 5 V. 1.6 0.2 1.5 0.1 This product has a low on-state resistance and superb switching charact
2sk2110.pdf
SMD Type MOSFETN-Channel MOSFET2SK21101.70 0.1 Features VDS (V) = 100V ID = 0.5 ADrain (D)0.42 0.10.46 0.1 RDS(ON) 1.2 (VGS = 10V) RDS(ON) 1.5 (VGS = 4V)Gate (G)1.GateInternal diode2.DrainGate3.SourceprotectiondiodeSource (S) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 10
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
