K2117A Datasheet, Equivalent, Cross Reference Search
Type Designator: K2117A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 1400 MHz
Collector Capacitance (Cc): 1 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO72
K2117A Transistor Equivalent Substitute - Cross-Reference Search
K2117A Datasheet (PDF)
2sk2116 2sk2117.pdf
2SK2116, 2SK2117Silicon N-Channel MOS FETADE-208-1347 (Z)1st. EditionMar. 2001ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulatorOutlineTO-220CFM1D231. GateG2. Drain3. SourceS2SK2116, 2SK2117Ordering InformationType No. VD
2sk2117.pdf
isc N-Channel MOSFET Transistor 2SK2117DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 500 VD
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
