All Transistors. 2N3866 Datasheet

 

2N3866 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N3866

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 5 W

Maximum Collector-Base Voltage |Vcb|: 55 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 500 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO5

2N3866 Transistor Equivalent Substitute - Cross-Reference Search

 

2N3866 Datasheet (PDF)

1.1. 3da3866 2n3866.pdf Size:108K _update

2N3866

3DA3866(2N3866)型 NPN 硅高频大功率晶体管 参数符号 测试条件 规范值 单位 PCM Ta=25℃ 5 W 极 ICM 0.4 A 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO IC=0.1mA ≥55 V V(BR)CEO IC=5.0mA ≥30 V V(BR)EBO IE=0.1mA ≥3.5 V 直 ICEO VCE=28V ≤20 μA 流 参 IC=100mA VCEsat ≤1 V 数 IB=20mA VCE=5V hFE ≥25 IC=50m A 交 VCE=15V 流

1.2. 2n3866ub.pdf Size:136K _upd

2N3866
2N3866

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http: //www.microsemi.com NPN SILICON HIGH-FREQUENCY TRANSISTOR Qualified per MIL-PRF-19500/398 DEVICES LEVELS 2N3866 2N3866UB JAN 2N3866A 2N3866AUB JANTX JANTX

 1.3. 2n3866 2n4427.pdf Size:45K _philips

2N3866
2N3866

DISCRETE SEMICONDUCTORS DATA SHEET 2N3866; 2N4427 Silicon planar epitaxial overlay transistors 1995 Oct 27 Product specification Supersedes data of August 1986 File under Discrete Semiconductors, SC08a Philips Semiconductors Product specification Silicon planar epitaxial 2N3866; 2N4427 overlay transistors DESCRIPTION APPLICATIONS NPN overlay transistors in TO-39 metal packages with

1.4. 2n3866 series.pdf Size:522K _central

2N3866
2N3866

2N3866 2N3866A www.centralsemi.com NPN SILICON DESCRIPTION: HIGH FREQUENCY TRANSISTOR The CENTRAL SEMICONDUCTOR 2N3866 and 2N3866A are Silicon NPN RF Transistors, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25C unless otherwise noted) SYMBOL UNITS Collector-

 1.5. 2n3866.pdf Size:331K _microsemi

2N3866
2N3866

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 1. Emitter 800 MHz Current-Gain Bandwidth Product 2. Ba

Datasheet: 2N386 , 2N3860 , 2N3860A , 2N3861 , 2N3862 , 2N3863 , 2N3864 , 2N3865 , AC128 , 2N3866A , 2N3866AUB , 2N3867 , 2N3867SM , 2N3868 , 2N3868SM , 2N3869 , 2N387 .

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