KC810 Datasheet and Replacement

   Type Designator: KC810
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 35 V
   Maximum Emitter-Base Voltage |Veb|: 6.5 V
   Maximum Collector Current |Ic max|: 0.02 A
   Max. Operating Junction Temperature (Tj): 155 °C
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO39A-1
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