KN2222 Datasheet. Specs and Replacement

Type Designator: KN2222  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 300 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO92

 KN2222 Substitution

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KN2222 datasheet

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KN2222

SEMICONDUCTOR KN2222/A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Low Leakage Current ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. N DIM MILLIMETERS Low Saturation Voltage A 4.70 MAX E K VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. B 4.80 MAX G C 3.70 MAX D Complementary to the KN2907/2907A. D 0.45 E 1.00 F ... See More ⇒

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KN2222

SEMICONDUCTOR KN2222S/AS TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES L B L DIM MILLIMETERS Low Leakage Current _ + 2.93 0.20 A B 1.30+0.20/-0.15 ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. C 1.30 MAX 2 Low Saturation Voltage 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. 1 G 1... See More ⇒

Detailed specifications: KGS1001, KGS1002, KGS1003, KGS1004, KGS1005, KM905, KM935, KN100, C5198, KN2222AS, KN2222S, KN2907, KN2907A, KN2907AS, KN2907S, KN3903, KN3903S

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