KN2222 Datasheet, Equivalent, Cross Reference Search
Type Designator: KN2222
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92
KN2222 Transistor Equivalent Substitute - Cross-Reference Search
KN2222 Datasheet (PDF)
kn2222 a.pdf
SEMICONDUCTOR KN2222/ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. B CFEATURES Low Leakage Current : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.N DIM MILLIMETERSLow Saturation Voltage A 4.70 MAXEK: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. B 4.80 MAXGC 3.70 MAXDComplementary to the KN2907/2907A.D 0.45E 1.00F
kn2222as s.pdf
SEMICONDUCTOR KN2222S/ASTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. EFEATURES L B LDIM MILLIMETERSLow Leakage Current _+2.93 0.20AB 1.30+0.20/-0.15: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.C 1.30 MAX2Low Saturation Voltage 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.1G 1
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
